Product Summary
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
?High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
?High Efficiency: 60%typ.on HF Band
Image | Part No | Mfg | Description | Pricing (USD) |
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RD100HHF1 |
Other |
Data Sheet |
Negotiable |
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RD1006LN |
Other |
Data Sheet |
Negotiable |
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RD1006LS |
Other |
Data Sheet |
Negotiable |
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RD1006LS-SB5 |
ON Semiconductor |
Diodes (General Purpose, Power, Switching) SCHOTTKY BARRIER DIODE |
Data Sheet |
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RD100FM |
Other |
Data Sheet |
Negotiable |
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RD100HHF1 |
Other |
Data Sheet |
Negotiable |
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RD10A12-08-P6 |
TE Connectivity |
Standard Circular Connectors RD10A12-08-P6 |
Data Sheet |
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